RJK03H1DPA - Built in SBD N Channel Power MOS FET

Renesas Technology

The RJK03H1DPA by Renesas Technology is a Built in SBD N Channel Power MOS FET. Below is the official datasheet preview.

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RJK03H1DPA Built in SBD N Channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the **RJK03H1DPA** Built in SBD N Channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK03H1DPA
Manufacturer	Renesas Technology
File Size	265.88 KB
Description	Built in SBD N Channel Power MOS FET
Datasheet	RJK03H1DPA-RenesasTechnology.pdf
Additional preview pages of the RJK03H1DPA datasheet.

RJK03H1DPA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance.
Pb-free.
Halogen-free Outline Preliminary Datasheet R07DS0216EJ0300 Rev.3.00 Mar 22, 2013.

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Published: Aug 21, 2015 |