RJK03E6DPA - Silicon N Channel Power MOS FET

Renesas Technology

The RJK03E6DPA by Renesas Technology is a Silicon N Channel Power MOS FET. Below is the official datasheet preview.

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RJK03E6DPA Silicon N Channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the **RJK03E6DPA** Silicon N Channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK03E6DPA
Manufacturer	Renesas Technology
File Size	122.42 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK03E6DPA_RenesasTechnology.pdf
Additional preview pages of the RJK03E6DPA datasheet.

RJK03E6DPA Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 8 V).
Pb-free.
Halogen-free.
Outline.

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Published: Jul 23, 2010 |