RJK03E3DNS - Silicon N Channel Power MOS FET

Renesas Technology

The RJK03E3DNS by Renesas Technology is a Silicon N Channel Power MOS FET. Below is the official datasheet preview.

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RJK03E3DNS Silicon N Channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the **RJK03E3DNS** Silicon N Channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK03E3DNS
Manufacturer	Renesas Technology
File Size	165.38 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK03E3DNS_RenesasTechnology.pdf
Additional preview pages of the RJK03E3DNS datasheet.

RJK03E3DNS Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.0 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free.
REJ03G1905-0200 Rev.2.00 Apr 06, 2010 Outline.

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Published: Jul 23, 2010 |