RJK0223DNS Silicon N Channel Power MOS FET

Renesas Technology

Description

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0110 Rev1.10 M.

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Datasheet Specifications

Part number: RJK0223DNS
Manufacturer: Renesas ↗ Technology
File Size: 324.67 KB
Datasheet: RJK0223DNS-RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008JD-A (Package: HWSON3046-8) 5678 234 D1 D1 D1 9 S1/D2 5678 4321 1 G1 MOS1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source S2 S2

RJK0223DNS Distributors

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RJK0223DNS Silicon Channel Power MOS FET Renesas Technology

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