HAT2285WP Silicon N-Channel Power MOSFET

Renesas Technology

Description

Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.3.10 M.

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Datasheet Specifications

Part number: HAT2285WP
Manufacturer: Renesas ↗ Technology
File Size: 120.36 KB
Datasheet: HAT2285WP_RenesasTechnology.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode

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HAT2285WP Silicon N-Channel Power MOSFET Renesas Technology

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