Download HAT2022R Datasheet PDF
Hitachi Semiconductor
HAT2022R
Features - - - - Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 ± 20 11 88 11 2.5 150 - 55 to + 150 Unit V V A A A W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ± 20 - - 1.0 - - 12 - - - - - - - - - Typ - - - - - 0.012 0.017 18 1450 950 380 60 450 80 160 0.8 70 Max - - ± 10 10 2.0 0.015 0.025 - - - - - - - - 1.3 - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns IF = 11 A, VGS = 0 Note3 IF = 11 A, VGS = 0 di F/ dt = 20...