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HAT2201R Silicon N-Channel Power MOSFET

HAT2201R Description

HAT2201R Silicon N Channel Power MOS FET Power Switching .

HAT2201R Features

* Capable of 8 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 34 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0233-0301Z Rev.3.01 Nov.30.201

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Silicon N-Channel Power MOSFET Renesas Technology
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