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HAT2202C Silicon N-Channel Power MOSFET

HAT2202C Description

HAT2202C Silicon N Channel MOS FET Power Switching www.DataSheet4U.com REJ03G1236-0600 Rev.6.00 Oct 01, 2009 .

HAT2202C Features

* Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Dr

HAT2202C Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon N-Channel Power MOSFET Renesas Technology
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