HAT2019R Silicon N-Channel Power MOSFET

Hitachi Semiconductor

Description

HAT2019R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-481 D (Z) 5th.Edition February 1999 .

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Datasheet Specifications

Part number: HAT2019R
Manufacturer: Hitachi Semiconductor
File Size: 50.15 KB
Datasheet: HAT2019R_HitachiSemiconductor.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP
* 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2019R Absolute Maximum Ratings (Ta = 25°C) Item Drain t

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HAT2019R Silicon N-Channel Power MOSFET Hitachi Semiconductor

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