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HAT2016R Silicon N-Channel Power MOSFET

HAT2016R Description

HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th.Edition June 1997 .

HAT2016R Features

* Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP
* 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2016R Absolute Maximum Ratings (Ta = 25°C) It

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Datasheet Details

Part number
HAT2016R
Manufacturer
Hitachi Semiconductor
File Size
53.56 KB
Datasheet
HAT2016R_HitachiSemiconductor.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET Hitachi Semiconductor
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