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HAT2198R - Silicon N-Channel Power MOSFET

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.2.0 6HS. 8.20 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse).

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Datasheet Details

Part number HAT2198R
Manufacturer Renesas Electronics
File Size 180.24 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2198R Datasheet
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Full PDF Text Transcription

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HAT2198R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V) Outline SOP-8 5 678 D DDD 4 G SS S 12 3 8 7 65 1 234 REJ03G0062-020 Rev.2.0 6HS.8.20 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID ID(pulse)Note1 14 112 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 14 14 19.6 2.
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