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HAT2199R - Silicon N-Channel Power MOSFET

Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 4 G 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0063-0300 Rev.3.00 Sep.23.2004 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 I.

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Datasheet Details

Part number HAT2199R
Manufacturer Renesas
File Size 104.26 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2199R Datasheet

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Full PDF Text Transcription

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HAT2199R Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 13.0 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 4 G 1 234 56 7 8 DD D D SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0063-0300 Rev.3.00 Sep.23.2004 Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 30 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 11 ID(pulse)Note1 88 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 11 11 12.1 2.0 62.
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