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HAT2196C
Silicon N Channel MOS FET Power Switching
REJ03G1235-0500 Rev.5.00 Jun. 13, 2005
Features
• Low on-resistance RDS(on) = 45 mΩ typ. (at VGS = 4.5 V) www.DataSheet4U.com • Low drive current. • High density mounting • 2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DDD D
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.
HAT2196C Datasheet
