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HAT2165H
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 2.5 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5
1 234
5 D
4 G
SSS 123
REJ03G0004-0600 Rev.6.00
Sep 20, 2005
1, 2, 3 Source
4
Gate
5
Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
HAT2165H Datasheet
