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HAT2165N
Silicon N Channel Power MOS FET Power Switching
Features
• High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i)
1(S)
2XXX
2(S)
3(S)
8(D)
4(G)
7(D)
4
6(D)
G
5(D)
5678 DDDD
SSS 12 3
REJ03G1680-0300 Rev.3.00
May 27, 2008
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.
HAT2165N Datasheet
