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HAT2169N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.0.01 May.29.2005
Features
www.DataSheet4U.com • Capable
• High speed switching of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
Outline
LFPAK-i
5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G)
4 G
8(D) 7(D) 6(D) 5(D)
2X XX
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
HAT2169N Datasheet
