H5N2522FP-E0-E - High Speed Power Switching MOS FET

Renesas Technology

H5N2522FP-E0-E Datasheet Preview — Preview of H5N2522FP-E0-E PDF

Datasheet Details

Part number	H5N2522FP-E0-E
Manufacturer	Renesas ↗ Technology
File Size	92.71 KB
Description	High Speed Power Switching MOS FET
Datasheet	H5N2522FP-E0-E-RenesasTechnology.pdf

H5N2522FP-E0-E Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C).
Low leakage current.
High speed switching.
Built-in fast recovery diode Outline.

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Published: Oct 18, 2015 |