H5N2522FP-E0-E High Speed Power Switching MOS FET

Renesas Technology

Description

H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

📥 Download Datasheet

H5N2522FP-E0-E Datasheet Preview — Preview of H5N2522FP-E0-E PDF

Datasheet Specifications

Part number: H5N2522FP-E0-E
Manufacturer: Renesas ↗ Technology
File Size: 92.71 KB
Datasheet: H5N2522FP-E0-E-RenesasTechnology.pdf
Description: High Speed Power Switching MOS FET

Features

* Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching
* Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to Source voltage G

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

H5N2522FP-E0-E Distributors

📁 Related Datasheet

H5N2509P H5N2005DL H5N2005DS H5N2901FL-M0 H5N3011P H5N5001FM

📌 All Tags

H5N2522FP-E0-E High Speed Power Switching MOS FET Renesas Technology

Renesas Technology H5N2522FP-E0-E-like datasheet