H5N2512CF - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Datasheet Details

Part number	H5N2512CF
Manufacturer	Renesas ↗ Technology
File Size	101.74 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2512CF_RenesasTechnology.pdf

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High Speed Switching.
Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temp.

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Published: Nov 20, 2008 |