H5N2508DS, H5N2508DL Datasheet - Renesas Technology

H5N2508DS Silicon N Channel MOS FET High Speed Power Switching

H5N2508DS Features

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* Low

* Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)

* High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)

* Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID

Datasheet Details

H5N2508DS, H5N2508DL

126.34 KB

Silicon n channel mos fet high speed power switching.

This datasheet PDF includes multiple part numbers: H5N2508DS, H5N2508DL.
Please refer to the document for exact specifications by model.

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