H5N2507P High Speed Power Switching MOSFET

Renesas Technology

Description

H5N2507P 250V - 50A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: H5N2507P
Manufacturer: Renesas ↗ Technology
File Size: 120.73 KB
Datasheet: H5N2507P-RenesasTechnology.pdf
Description: High Speed Power Switching MOSFET

Features

* Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
* Low leakage current
* High speed switching
* Low gate charge
* Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Dr

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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H5N2507P High Speed Power Switching MOSFET Renesas Technology

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