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QPA1315 - 35 Watt GaN Power Amplifier

Datasheet Summary

Description

Data Sheet Rev.

B, February 2024 | Subject to change without notice 1 of 30 © 2024 Qorvo US, Inc.

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Features

  • Frequency Range: 15.4.
  • 17.7 GHz.
  • PSAT (PIN = 24 dBm): 45.5 dBm.
  • PAE (PIN = 24 dBm): 20 %.
  • Power Gain (PIN = 24 dBm): 21 dB.
  • Small Signal Gain: 25 dB.
  • Bias: Pulsed VD = 26 V, IDQ = 640 mA, VG = -2.5 V typ. Range, PW = 100 uS, DC = 10%.
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management. Performance is typical across frequency. Please reference electrical specifica.

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Datasheet Details

Part number QPA1315
Manufacturer Qorvo
File Size 1.59 MB
Description 35 Watt GaN Power Amplifier
Datasheet download datasheet QPA1315 Datasheet
Additional preview pages of the QPA1315 datasheet.

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Full PDF Text Transcription

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QPA1315 15.4 – 17.7 GHz 35 Watt GaN Power Amplifier Product Overview Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 – 17.7 GHz band. It provides 35 W of saturated output power with 21 dB of large signal gain while achieving 20% power-added efficiency. The QPA1315 is packaged in a 10-lead 15 x 15 mm boltdown with a Cu base for superior thermal management. To simplify system integration, the QPA1315 is fully matched to 50 ohms with DC grounded I/O ports for optimum ESD performance. Also, there are on-chip blocking capacitors following the DC grounds on the input and output ports.
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