NDP6060 N-Channel FET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, Field Effect Transistor, Enhancement Mode NDP6060 / NDB6060 VDSS 60 V RDS(ON) MAX 0.025 mW @ .
These N. Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDP6060
Manufacturer: ON Semiconductor ↗
File Size: 254.01 KB
Datasheet: NDP6060-ONSemiconductor.pdf
Description: N-Channel FET

Features

* 48 A, 60 V
* RDS(ON) = 0.025 mW @ VGS = 10 V
* Critical DC Electrical Parameters Specified at Elevated Temperature
* Rugged Internal Source
* Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor
* 175°C Maximum Junction T

Applications

* such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in

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NDP6060 N-Channel FET ON Semiconductor

ON Semiconductor NDP6060-like datasheet