NDP6030 N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDP6030
Manufacturer: Fairchild
File Size: 56.18 KB
Datasheet: NDP6030_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l

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NDP6030 N-Channel Enhancement Mode Field Effect Transistor Fairchild

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