NDP603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor

Fairchild

Description

January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDP603AL
Manufacturer: Fairchild
File Size: 65.70 KB
Datasheet: NDP603AL_FairchildSemiconductor.pdf
Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

* 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperatur

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NDP603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild

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