NDP6050 N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

📥 Download Datasheet

NDP6050 Datasheet Preview — Preview of NDP6050 PDF

Datasheet Specifications

Part number: NDP6050
Manufacturer: Fairchild
File Size: 66.48 KB
Datasheet: NDP6050_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low

NDP6050 Distributors

📁 Related Datasheet

NDP605A NDP605B NDP6020P NDP6060 NDP6060L NDP606A

📌 All Tags

NDP6050 N-Channel Enhancement Mode Field Effect Transistor Fairchild

Fairchild NDP6050-like datasheet