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NDP6051 N-Channel Enhancement Mode Field Effect Transistor

NDP6051 Description

May 1996 NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDP6051 Features

* 48 A, 50 V. RDS(ON) = 0.022 Ω @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremel

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Datasheet Details

Part number
NDP6051
Manufacturer
Fairchild
File Size
67.02 KB
Datasheet
NDP6051_FairchildSemiconductor.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor Fairchild
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