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NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDP6030L Description

June 1996 NDP6030L / NDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

NDP6030L Features

* 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON)

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Datasheet Details

Part number
NDP6030L
Manufacturer
Fairchild
File Size
357.87 KB
Datasheet
NDP6030L_FairchildSemiconductor.pdf
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
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