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HGTG30N60B3D N-Channel IGBT

HGTG30N60B3D Description

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device co.

HGTG30N60B3D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. Th

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