Datasheet Specifications
- Part number
- HGTG30N60A4D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 151.75 KB
- Datasheet
- HGTG30N60A4D_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
Data Sheet HGTG30N60A4D September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high volt.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used inApplications
* operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345. Ordering Information PART NUMBER PACKAGE BRAND HGTG30N60A4D TO-247 30N60A4D NOTE: When ordering, use theHGTG30N60A4D Distributors
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