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HGTG32N60E2 N-Channel IGBT

HGTG32N60E2 Description

HGTG32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE .
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

HGTG32N60E2 Features

* 32A, 600V
* Latch Free Operation
* Typical Fall Time - 600ns
* High Input Impedance

HGTG32N60E2 Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. This device incorporates generation two design techniques which yield improved peak current capability and larger short circuit with

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N-Channel IGBT Intersil Corporation
Intersil Corporation HGTG32N60E2-like datasheet