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HGTG30N120D2 N-Channel IGBT

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Description

HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) .
The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

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Features

* 30A, 1200V
* Latch Free Operation
* Typical Fall Time - 580ns
* High Input Impedance

Applications

* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG30N120D2 PACKAGE TO-247 BRAND G30N120D2 E G Terminal Diagram N-CHANNEL ENHANCEMENT

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