Datasheet Specifications
- Part number
- HGTG11N120CND
- Manufacturer
- Intersil Corporation
- File Size
- 82.18 KB
- Datasheet
- HGTG11N120CND_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGTG11N120CND Data Sheet January 2000 File Number 4580.2 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND i.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applHGTG11N120CND Distributors
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