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HGTG11N120CND N-Channel IGBT

HGTG11N120CND Description

HGTG11N120CND Data Sheet January 2000 File Number 4580.2 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND i.

HGTG11N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl

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