FDN358P Datasheet (ON Semiconductor)

FDN358P, P-Channel MOSFET

This P *Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for portable electronics ap

FDN358P Features

* 1.5 A,

* 30 V

* RDS(ON) = 125 mW @ VGS =

* 10 V

* RDS(ON) = 200 mW @ VGS =

* 4.5 V

* Low Gate Charge (4 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* High Power Version of Industry Standard