2SD1683 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes Large current capacity and wide ASO.
Low saturation voltage Speciﬁcations ( ): 2SB1143 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C1 Conditions Ratings (--)60 (--)50 (-)6 (-)4 (-)6 1.5 0 150 -55 to +.

📁 2SD1683 Similar Datasheet

2SD1680 - NPN Transistor (INCHANGE)
2SD1681 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1682 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2Sd1684 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1684 - Silicon NPN Power Transistor (Inchange Semiconductor)
2SD1685 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SD1600 - NPN Transistor (INCHANGE)
2SD1601 - Power Transistor (Inchange Semiconductor)

Other Datasheets by ON Semiconductor

Published: May 18, 2014 |