2SD1681 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SD1681
Manufacturer	Sanyo Semicon Device
File Size	131.10 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1681_SanyoSemiconDevice.pdf

Low saturation voltage and excellent linearity of hFE.
Wide ASO. Package Dimensions unit:mm 2042A [2SB1141/2SD1681] ( ) : 2SB1141 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions.

📁 2SD1681 Similar Datasheet

2SD1680 - NPN Transistor (INCHANGE)
2SD1683 - Bipolar Transistor (ON Semiconductor)
2SD1684 - Silicon NPN Power Transistor (Inchange Semiconductor)
2SD1600 - NPN Transistor (INCHANGE)
2SD1601 - Power Transistor (Inchange Semiconductor)
2SD1602 - Power Transistor (Inchange Semiconductor)
2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
2SD1604 - NPN Transistor (Hitachi Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Apr 3, 2005 |