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2SD1601 - Power Transistor

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2SD1601 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 2A Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications.

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