2SD1646 - Power Transistor

Inchange Semiconductor

📥 Download Datasheet

2SD1646 Datasheet Preview — Preview of 2SD1646 PDF

Datasheet Details

Part number	2SD1646
Manufacturer	Inchange Semiconductor
File Size	209.53 KB
Description	Power Transistor
Datasheet	2SD1646_InchangeSemiconductor.pdf

2SD1646 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) High DC Current Gain : hFE= 1000(Min) @IC= 1A Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications.

📁 2SD1646 Similar Datasheet

2SD1641 - SILICON PNP TRIPLE DIFFUSED PLANAR TYPE TRANSISTOR (Panasonic Semiconductor)
2SD1645 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
2SD1647 - NPN Silicon Transistor (Rohm)
2SD1649 - NPN Transistor (INCHANGE)
2SD1600 - NPN Transistor (INCHANGE)
2SD1603 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor Company)
2SD1604 - NPN Transistor (Hitachi Semiconductor)
2SD1606 - Silicon NPN Transistor (Hitachi Semiconductor)

Other Datasheets by Inchange Semiconductor

2SD1640 - Silicon NPN Power Transistor
2SD1601 - Power Transistor
2SD1602 - Power Transistor
2SD1605 - Power Transistor
2SD1608 - Power Transistor
2SD1653 - Power Transistor

Published: Sep 22, 2009 |