2SD1606 Datasheet (Hitachi Semiconductor)

2SD1606, Silicon NPN Transistor

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1.

Base 2.

Collector (Flange) 3.

Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1.

Value at TC = 25°C.

Symbol VCBO VCEO VEB