2SD1620 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Less power dissipation because of low VCE(sat), permitting more ﬂashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low current to high current.
Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitt.

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Published: Jan 20, 2016 |