2SD1623 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Speciﬁcations ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Coll.

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Published: May 31, 2015 |