MRF21060LR3 Datasheet (NXP) - RF Power Field Effect Transistors

MRF21060LR3, RF Power Field Effect Transistors

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz.

Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

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MRF21060LR3 Features

* Internally Matched for Ease of Use

* High Gain, High Efficiency and High Linearity

* Integrated ESD Protection

* Designed for Maximum Gain and Insertion Phase Flatness

* Excellent Thermal Stability

* Characterized with Series Equivalent Large - Sign