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MRF21030LSR3 - RF Power Field Effect Transistors

Download the MRF21030LSR3 datasheet PDF (MRF21030LR3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power field effect transistors.

Features

  • .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC.

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Note: The manufacturer provides a single datasheet file (MRF21030LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Wideband CDMA Performance: - 45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
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