MRF24300N Datasheet - NXP

MRF24300N RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor N Channel Enhancement Mode Lateral MOSFET This 300 W CW transistor is designed for industrial, scientific, medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency device is targeted to replace industrial magnetrons and will provide longer life and ease of use. Typical Performance: In 2400 2500 MHz reference circuit, VDD .

MRF24300N Features

* Characterized with series equivalent large

* signal impedance parameters

* Internally matched for ease of use

* Qualified for operation at 32 Vdc

* Integrated ESD prote

MRF24300N Datasheet (381.30 KB)