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MRF24G300HS - RF Power GaN Transistors

NXP

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Datasheet Details

Part number	MRF24G300HS
Manufacturer	NXP
File Size	259.58 KB
Description	RF Power GaN Transistors
Datasheet	MRF24G300HS-NXP.pdf

MRF24G300HS Product details

Features

Advanced GaN on SiC, for optimal thermal performance.
Characterized for CW, long pulse (up to several seconds) and short pulse operations.
Device can be used in a single--ended or push--pull configuration.
Input matched for simplified input circuitry.
Qualified up to 55 V.
Suitable for linear.

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Published: May 5, 2020 |