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MRF21010LR1 - RF Power Field Effect Transistors

Freescale Semiconductor

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Datasheet Details

Part number	MRF21010LR1
Manufacturer	Freescale Semiconductor
File Size	428.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF21010LR1-FreescaleSemiconductor.pdf

MRF21010LR1 Product details

Features

High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Characterized with Series Equivalent Large--Signal Impedance Parameters.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 3.

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Published: May 10, 2018 |