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MRF21030R3 - RF POWER FIELD EFFECT TRANSISTORS

Features

  • .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. • Wideband CDMA Performance: –45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.
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