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LTE42008R - NPN microwave power transistor

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Input matching cell improves input impedance and allows an easier design of circuits.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits. APPLICATION • Common emitter class-A linear power amplifiers up to 4.2 GHz.
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