Full PDF Text Transcription for LTE42005S (Reference)
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DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product s...
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ersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION • Common emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
LTE42005S Datasheet
