Datasheet Details
| Part number | LTE21015R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 71.65 KB |
| Description | NPN microwave power transistor |
| Datasheet |
 LTE21015R Datasheet
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General Description
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Fig.1 Simplified outline and symbol.
Key Features
- Interdigitated structure provides high emitter efficiency.
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Input matching cell allows an easier design of circuits.