Datasheet Details
| Part number | LTE21025R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 51.80 KB |
| Description | NPN microwave power transistor |
| Datasheet |
 LTE21025R Datasheet
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General Description
1 c
APPLICATIONS
Common emitter class-A linear power amplifiers up to 4.2 GHz.
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Key Features
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
- Self-aligned process entirely ion implanted.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R.